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Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 9.0A
V GS = 0V, I S = -6.5A
Q1
I F = 9.0A, di/dt = 100A/s
Q2
I F = -6.5A, di/dt = 100A/s
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.87
0.88
25
29
19
29
1.2
-1.2
38
44
29
44
V
ns
nC
Notes:
1. R T JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R T JC is guaranteed by design while R T CA is determined
by the user's board design.
Q1
Q2
a. 40°C/W when mounted on
a 1 in 2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
a. 40°C/W when mounted on
a 1 in 2 pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 P s, Duty cycle < 2.0%.
3. Starting T J = 25°C, N-ch: L = 0.3mH, I AS = 14A, V DD = 40V, V GS = 10V; P-ch: L = 0.3mH, I AS = -15A, V DD = -40V, V GS = -10V.
?2013 Fairchild Semiconductor Corporation
FDD8424H Rev.C1
3
www.fairchildsemi.com
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